Effect of Ge Concentration on the On-Current Boosting of Logic P-Type MOSFET with Sigma-Shaped Source/Drain

Silicon german ium (SiGe) has attracted significant attention for applications in the source/drain (S/D) regions of p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs). However, SiGe, as Ge concentration increases, high-density defects are generated, which limit its applications. Therefore, several techniques have been developed to minimize defects; however, these require relatively thick epitaxial layers and not suitable gate-all-around FETs. This study examined effect on embedded SiGe region a logic p-MOSFET. The strain was calculated through nano-beam diffraction predictions simulation were compared understand effects stress relaxation change applied Si channel. When device performance evaluated, drain saturation current approximately 710 µA/µm at an off 100 nA/µm with voltage 1 V, indicating that enhanced by 58% when optimized.